2SA1761,T6F(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1761,T6F(J) is a silicon PNP epitaxial planar transistor manufactured using the PCT process. Designed for power amplifier and switching applications, it features a low collector-emitter saturation voltage of −0.5 V maximum at an IC of −0.5 A. The device offers high-speed switching with a typical storage time of 0.2 μs and a transition frequency of 100 MHz. It operates within a collector current range up to −3 A and withstands a collector-emitter voltage of −50 V. The component is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient power handling
• High-speed switching capability with short storage times
• Complementary pairing with the 2SC4604 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific environmental compliance variations. Confirm the exact ordering suffix matches the required tape-and-reel packaging format. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing design parameters. Ensure application designs account for absolute maximum ratings to maintain long-term reliability under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a robust PNP transistor with low saturation voltage and fast switching speeds. The TO-92MOD package suits general electronics, office equipment, and measuring instruments. Verify that the complementary 2SC4604 is available if a matched pair is required for push-pull configurations. Evaluate thermal management requirements against the 900 mW power dissipation rating.

Single Bipolar Transistors Part Context

This device belongs to the 2SA series of PNP transistors from Toshiba Semiconductor and Storage. It utilizes the PCT (Planar Chip Transistor) process technology to achieve reliable performance in compact packages. The 2SA1761 is specifically engineered to complement the 2SC4604 NPN transistor, facilitating balanced circuit designs for audio amplification and switching tasks.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4604 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.