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2SA1761,T6F(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 3A TO-92MOD. Review the specifications below when checking this part for your BOM.
The Toshiba Semiconductor and Storage 2SA1761,T6F(M is a silicon PNP epitaxial transistor manufactured using the PCT process. It features a collector-emitter saturation voltage of −0.5 V maximum at an IC of −0.5 A, with a typical storage time of 0.2 μs for high-speed switching. The device supports a collector current of −3 A and a collector power dissipation of 900 mW. It operates within a junction temperature range up to 150 °C and utilizes a JEDEC TO-92MOD package.
Verify RoHS compatibility status by contacting the manufacturer or authorized distributor, as indicated in the datasheet marking notes. Confirm that the specific ordering suffix matches the required environmental compliance standards. Ensure the component is sourced from authorized channels to guarantee authenticity and adherence to Toshiba's reliability guidelines during procurement.
Select this component for designs requiring a PNP transistor with low saturation voltage and fast switching speeds. Ensure the operating conditions remain within the absolute maximum ratings, particularly regarding collector current and power dissipation. Consider thermal derating requirements for continuous heavy loads to maintain long-term reliability in the target application environment.
This device belongs to Toshiba's lineup of silicon PNP epitaxial transistors designed for general electronics. It serves as the complementary counterpart to the 2SC4604 NPN transistor, facilitating push-pull configurations. The part is intended for use in computers, office equipment, and industrial robots, adhering to standard general electronics application guidelines provided by the manufacturer.
The 2SC4604 is documented as the complementary pair, not a direct substitute. No other public substitute part numbers are confirmed in the source material.
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