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2SA1766-D-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP PNP 0.3A 25V. Review the specifications below when checking this part for your BOM.
The onsemi 2SA1766-D-TD-E is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a maximum DC collector current of -0.3 A and a collector-emitter voltage rating of -25 V. The device operates within a temperature range of -55°C to +150°C, with a maximum power dissipation of 500 mW. Packaged in a surface-mount PCP format with three pins, it offers a minimum DC current gain (hFE) of 100 and a transition frequency (ft) of 120 MHz.
Verify the specific suffix '-TD-E' against the manufacturer's latest datasheet to confirm pinout and electrical tolerances. Ensure the procurement source provides traceable documentation matching the onsemi part number. Cross-reference the package type PCP dimensions with PCB footprint requirements before finalizing orders to prevent assembly errors.
Select this component when a PNP transistor with moderate current handling (-0.3A) and low voltage ratings (-25V) is required. Consider the 120 MHz transition frequency for high-speed switching needs. Evaluate thermal management strategies given the 500 mW power dissipation limit in compact surface-mount configurations.
This component belongs to onsemi's discrete bipolar transistor portfolio, targeting cost-sensitive consumer and industrial applications. The 2SA series designation indicates a legacy compatibility lineage often used in replacement designs for older analog circuits requiring reliable PNP switching elements.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins before considering alternative manufacturers.
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