2SA1770T-AN

Single Bipolar Transistors Overview

The onsemi 2SA1770T-AN is a PNP bipolar junction transistor (BJT) utilizing the MBIT process. It features a collector-to-emitter voltage of 160 V and a continuous collector current of 1.5 A, with a peak pulse current rating of 2.5 A. The device provides a gain-bandwidth product of 120 MHz and operates at a maximum junction temperature of 150 °C. Packaged in an NMP (SC-71) format for through-hole mounting, it offers low saturation voltages and high breakdown capabilities suitable for power switching applications.

Single Bipolar Transistors Feature Summary

• Adopts MBIT process technology for enhanced performance
• Provides high breakdown voltage and large current capacity
• Delivers low collector-to-emitter saturation voltage

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• High-voltage amplifier stages
• Driver circuits requiring robust current handling

Single Bipolar Transistors Procurement Notes

Verify component authenticity by checking the marking code 'A1770' and lot number against the datasheet specifications. Confirm the package type matches the NMP (SC-71) outline drawing. Ensure the ordering suffix 'T-AN' corresponds to the specified tape-and-reel shipping memo of 2,500 pieces per box. Cross-reference the manufacturer part number with official onsemi documentation to validate the specific electrical ranking.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that require a PNP transistor with a minimum 160 V collector-to-emitter breakdown voltage. It is appropriate for applications demanding up to 1.5 A continuous collector current with efficient switching characteristics. Consider the NMP package constraints for thermal management and board layout requirements. Verify that the required DC current gain falls within the specified S or T rank classifications based on the operating collector current.

Single Bipolar Transistors Part Context

This component belongs to the 2SA1770 series manufactured by onsemi. It is functionally paired with the 2SC4614 NPN transistor in complementary configurations. Both devices share similar structural designs and are intended for use in symmetric power switching and amplification applications. The series utilizes the MBIT process to achieve high voltage tolerance and reliable operation under stress conditions.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: None identified.