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The 2SA1778 is a PNP epitaxial planar silicon transistor designed for VHF converter and local oscillator applications. It features a high power gain of 13 dB typical at 0.4 GHz and a cutoff frequency of 1.2 GHz typical. The device operates with a collector-emitter voltage of -3 V, collector current of -50 mA, and collector dissipation of 520 mW. Key electrical characteristics include a low output capacitance (Cob) of 1.0 pF typical and a noise figure of 2.5 dB typical at 400 MHz. It serves as the complementary pair to the 2SC4269 NPN transistor.
Verify the manufacturer origin, as SANYO Semiconductor was acquired by onsemi. Confirm the specific ordering suffix matches the required hFE rank (2, 3, or 4). Ensure the component meets the absolute maximum ratings for voltage, current, and temperature to prevent failure.
Select based on the required hFE rank (2, 3, or 4) which correlates to specific DC current gain ranges. Consider the operating frequency up to 1.2 GHz and the need for low noise figure in RF front-end designs. Verify compatibility with the complementary 2SC4269 if used in push-pull configurations.
Originally manufactured by SANYO Electric Co., Ltd., this component is now part of the onsemi portfolio following corporate acquisitions. The datasheet identifies it as a specialized RF transistor optimized for VHF band operations, distinct from general-purpose switching transistors.
The 2SC4269 is documented as its complementary pair. No other direct substitute part numbers are confirmed in the provided documentation.
The 2SC4269 is the designated complementary NPN transistor pair.
The device is classified into ranks 2, 3, and 4, corresponding to DC current gain ranges of 100-160, 160-260, and 260-400 respectively.
The typical power gain is 13 dB at a frequency of 0.4 GHz.