SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Panasonic 2SA1790GCL is a silicon PNP epitaxial planar transistor designed for high-frequency amplification. It operates with a collector-emitter voltage of -20 V and a maximum collector current of -30 mA, dissipating up to 125 mW. The device features a transition frequency (fT) ranging from 150 MHz to 300 MHz at 200 MHz test conditions. DC current gain (hFE) varies by rank: Rank B offers 70 to 140, while Rank C provides 110 to 220. It utilizes the SSMini3-F3 surface-mount package.
Verify the specific hFE rank (B or C) required for your circuit design, as performance ranges differ between them. Confirm the latest lifecycle status via the manufacturer's official website, as this component may be subject to maintenance or discontinuation schedules. Ensure compatibility with the SSMini3-F3 footprint during PCB layout.
Select Rank B if a lower minimum gain of 70 is acceptable, or Rank C for higher gain starting at 110. Consider the noise figure specifications when designing sensitive front-end stages. Verify that the operating environment stays within the specified junction temperature limits to maintain reliability.
This component is part of Panasonic's discrete transistor lineup, specifically engineered for small-signal high-frequency tasks. It serves as the complementary pair to the 2SC4626G NPN transistor, facilitating balanced circuit designs in audio and radio frequency applications.
Consult the manufacturer's official documentation for verified substitute part numbers. Cross-referencing should focus on matching the SSMini3-F3 package, -20 V rating, and comparable fT characteristics.