SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
2SA1797T100P is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 50V 2A MPT3. Review the specifications below when checking this part for your BOM.
The 2SA1797T100P is a PNP silicon small signal bipolar transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of -50V and a continuous collector current (IC) of -3A. The device operates with a maximum power dissipation of 0.5W at 25°C ambient temperature, rising to 2W when mounted on a specified ceramic board. Key electrical characteristics include a minimum DC current gain (hFE) of 82 and a transition frequency (fT) of 200MHz. The component utilizes an MPT3 surface-mount package.
Verify the specific ordering suffix T100 against official ROHM documentation to confirm the basic ordering unit and packaging configuration. Ensure the hFE binning code marked on the device matches the required gain specifications for the intended circuit design. Confirm RoHS compliance status through the manufacturer's latest product release notices before finalizing procurement.
Select this component for applications requiring a high-current PNP switch or amplifier stage paired with an NPN counterpart. Consider the thermal resistance limitations when designing for continuous operation without adequate heatsinking. Evaluate the safe operating area curves to ensure pulse currents do not exceed the single-pulse limits defined in the datasheet specifications.
This part belongs to the ROHM general-use small signal transistor family designed for standard electronic equipment. It serves as the PNP complement to the 2SC4672 NPN transistor, facilitating push-pull or differential amplifier configurations. The MPT3 package provides a compact footprint suitable for surface-mount assembly processes common in modern consumer electronics manufacturing.
The 2SC4672 is documented as the complementary NPN partner. Verify pinout compatibility and absolute maximum ratings when substituting with other -50V, -3A PNP transistors from different manufacturers.
The maximum VCE(sat) is -0.35V when measured at IC/IB = -1A / -50mA.
Power dissipation increases from 0.5W to 2W when the device is mounted on a 40 x 40 x 0.7mm ceramic board.
No, the datasheet specifies it is intended for general-use electronic equipment and is not designed for radiation tolerance or extreme reliability requirements typical of automotive applications.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.