Single Bipolar Transistors 2SA1832-GR,LF product image

2SA1832-GR,LF

$0.15
  • Description:TRANS PNP 50V 0.15A SSM
  • Series:-

SKU:e83ac64ed332 Category: Brand:

  
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2SA1832-GR,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 0.15A SSM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1832-GR,LF

  • Description:TRANS PNP 50V 0.15A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:100 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1832-GR,LF

2SA1832-GR,LF

Single Bipolar Transistors Overview

The 2SA1832-GR,LF is a silicon PNP epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for audio frequency general-purpose amplifier applications. Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of -50 V and a maximum collector current (IC) of -150 mA. The device features a high DC current gain (hFE) ranging from 120 to 400, with excellent hFE linearity where the ratio of hFE at -0.1 mA to hFE at -2 mA is typically 0.95. It serves as the complementary counterpart to the 2SC4738F NPN transistor.

Single Bipolar Transistors Feature Summary

  • High voltage rating of -50 V collector-emitter breakdown
  • High current capability up to -150 mA maximum collector current
  • Wide DC current gain range from 120 to 400
  • Excellent hFE linearity for consistent amplification performance

Single Bipolar Transistors Applications

  • Audio frequency general-purpose amplifier circuits
  • Complementary pairing with 2SC4738F in push-pull configurations
  • Low-voltage signal amplification stages

Single Bipolar Transistors Procurement Notes

Verify the complete part number including the suffix '-GR,LF' to ensure correct binning and lead-free compliance. Confirm the manufacturer is Toshiba Semiconductor and Storage. Check datasheet revisions for any updates to electrical limits or thermal characteristics before finalizing design integration.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -50 V rating and -150 mA current capacity is required for audio applications. Consider its complementary relationship with the 2SC4738F for balanced circuit designs. Evaluate the hFE binning requirements (-GR suffix) against the specific gain needs of the amplifier stage to ensure performance consistency.

Single Bipolar Transistors Part Context

The 2SA1832 series belongs to Toshiba's lineup of silicon PNP epitaxial transistors optimized for audio frequencies. These devices utilize an epitaxial planar process to achieve high reliability and consistent electrical parameters. The series is commonly used in consumer electronics and audio equipment where low distortion and stable gain are critical.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute: 2SA1832FT. Verify pinout compatibility and electrical parameter equivalence before substitution.

2SA1832-GR,LF2SA1832-GR,LF
$0.15
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