2SA1836-T1-A

$0.08

Description：TRANS PNP 50V 0.1A SC-75
Series：-

SKU:7c3834b7986c Category: Single Bipolar Transistors Brand: Renesas

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Product introduction

2SA1836-T1-A is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas. Its product description is TRANS PNP 50V 0.1A SC-75. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1836-T1-A

Description：TRANS PNP 50V 0.1A SC-75
Series：-
Mfr：Renesas
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：90 @ 1mA, 6V
Power - Max：200 mW
Frequency - Transition：180MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-75, SOT-416
Supplier Device Package：SC-75
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1836-T1-A

2SA1836-T1-A

Single Bipolar Transistors Overview

The Renesas 2SA1836-T1-A is a PNP silicon epitaxial transistor housed in an SC-75 (USM) package. It supports a collector-to-emitter voltage of -50 V and a continuous collector current of -100 mA. The device features a typical DC current gain (hFE2) of 200 at -1.0 mA, with a gain-bandwidth product reaching 180 MHz. Total power dissipation is rated at 200 mW, and the junction temperature range extends up to 150 °C.

Single Bipolar Transistors Feature Summary

High DC current gain for efficient signal amplification
Capable of automatic surface mounting via SC-75 package
Suitable for high-voltage switching applications

Single Bipolar Transistors Applications

General-purpose amplification circuits
Switching applications requiring high voltage tolerance
Consumer electronic devices

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification mark required for your design, as the component is sorted into bins M4 through M7 based on gain ranges. Confirm that the SC-75 package dimensions align with your PCB footprint requirements. Ensure the operating conditions remain within the specified absolute maximum ratings to prevent device failure.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate current handling and high voltage capability is needed. Consider the hFE binning if precise gain control is critical for your amplifier stage. Evaluate the thermal performance against the 200 mW dissipation limit under your expected ambient temperature conditions.

Single Bipolar Transistors Part Context

This component belongs to the family of PNP silicon epitaxial transistors manufactured by Renesas Electronics. It serves as a discrete semiconductor solution for general-purpose electronics. The device integrates standard bipolar junction transistor functionality within a compact surface-mount form factor suitable for automated assembly processes.