2SA1837,HFEYHF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1837 is a PNP silicon epitaxial transistor designed for power amplifier applications. It features a high transition frequency of 70 MHz typical, making it suitable for driver stage amplification. The device is electrically complementary to the 2SC4793 NPN transistor. Absolute maximum ratings include a collector-emitter voltage of -230 V, a collector current of -1 A, and a collector power dissipation of 2 W at an ambient temperature of 25°C, increasing to 20 W at a case temperature of 25°C. The junction temperature rating reaches 150°C.

Single Bipolar Transistors Feature Summary

• High transition frequency optimized for audio frequency power amplifier applications
• Designed as a complementary pair to the 2SC4793 NPN transistor
• Capable of handling significant collector currents with high breakdown voltage

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributors, as lead-free availability varies by specific ordering suffix. Confirm that the component meets general electronics application standards and is not utilized in unintended usage scenarios requiring extraordinary reliability. Ensure designs adhere to the specified absolute maximum ratings and derating concepts outlined in the Toshiba Semiconductor Reliability Handbook.

Single Bipolar Transistors Selection Notes

Select this component when designing PNP stages for power amplification requiring a transition frequency around 70 MHz. It serves as the direct complementary match to the 2SC4793 NPN transistor. Consider the thermal management requirements carefully, as power dissipation capabilities differ significantly between ambient and case mounting conditions. Verify package compatibility with the TO-220NIS form factor for appropriate heat sinking.

Single Bipolar Transistors Part Context

This component belongs to the family of bipolar junction transistors manufactured by Toshiba Semiconductor and Storage. It utilizes a silicon epitaxial process technology. The device is housed in a through-hole package, specifically identified as TO-220NIS, which facilitates mounting on heat sinks for thermal regulation during operation.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4793 as the complementary NPN transistor for this device. No other substitute part numbers are documented in the provided source material.