Single Bipolar Transistors 2SA1837,TOA1F(J product image

2SA1837,TOA1F(J

  • Description:TRANS PNP 230V 1A TO-220NIS
  • Series:-

SKU:fa4977bc49f8 Category: Brand:

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2SA1837,TOA1F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 230V 1A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1837,TOA1F(J

  • Description:TRANS PNP 230V 1A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):230 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:70MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1837,TOA1F(J

2SA1837,TOA1F(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1837 is a silicon PNP epitaxial transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 70 MHz typical. The device supports a collector current of -1 A and withstands collector-emitter voltages up to -230 V. Power dissipation reaches 20 W at a case temperature of 25°C, with a maximum junction temperature of 150°C. It is packaged in the TO-220NIS (JEITA 2-10R1A) format.

Single Bipolar Transistors Feature Summary

  • High transition frequency suitable for RF and audio driver stages
  • Complementary pairing with the 2SC4793 NPN transistor
  • Robust power handling capabilities for amplifier circuits

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributors, as legacy variants may differ. Confirm package marking details match the specific ordering suffix required. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing designs. Ensure component sourcing aligns with current supply status notifications.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary push-pull output stages requiring a PNP counterpart to the 2SC4793. Evaluate thermal management requirements carefully, as power dissipation ratings depend heavily on case temperature conditions. Verify that the -230 V breakdown voltage meets the circuit's peak voltage demands. Consider the TO-220NIS package constraints for mounting and heat sinking integration.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete bipolar transistor lineup, specifically engineered for general electronics applications such as computer equipment, office machinery, and domestic appliances. It serves as a standard solution for medium-power amplification tasks within consumer and industrial electronic systems.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4793 as the complementary NPN transistor for paired operation.

2SA1837,TOA1F(J2SA1837,TOA1F(J

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