2SA1887(F)

Single Bipolar Transistors Overview

The Toshiba 2SA1887(F) is a silicon PNP epitaxial planar transistor utilizing the PCT process, designed for high-current switching applications. It features a collector-emitter breakdown voltage of -50 V and a maximum continuous collector current of -10 A. The device achieves a low collector saturation voltage of -0.4 V (max) at -5 A with a base drive of -0.25 A. Key electrical parameters include a DC current gain ranging from 120 to 400 at -1 A, a transition frequency of 45 MHz, and a collector output capacitance of 215 pF. Power dissipation reaches 25 W at a case temperature of 25°C.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage optimized for efficient high-current switching operations
• High DC current gain ensuring effective control within amplifier and driver circuits
• Robust thermal performance supporting up to 25 W power dissipation under specified conditions

Single Bipolar Transistors Applications

• General electronics applications including computers and office equipment
• Industrial robots and measuring equipment
• Home electronics appliances

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba sales representatives, as markings indicate potential variations in environmental compliance. Confirm package type matches JEDEC SC-67 standards. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing designs. Ensure application constraints align with general electronics usage guidelines rather than unintended high-reliability sectors.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring robust PNP switching capabilities with moderate voltage ratings. The specific saturation characteristics make it suitable for driving loads directly where voltage drop minimization is critical. Evaluate thermal management requirements carefully, as power dissipation relies heavily on case temperature limits. Verify that operating currents remain within the safe operating area defined in the datasheet curves.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's lineup of silicon PNP epitaxial transistors manufactured using the PCT process. It serves as a discrete semiconductor solution for general-purpose switching tasks. The component is distinct from automotive or aerospace-grade parts, focusing instead on standard industrial and consumer electronics markets where cost-effective high-current handling is required.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for direct substitutes. Cross-reference pinouts and absolute maximum ratings when considering alternative manufacturers' equivalents to ensure functional compatibility without redesigning the surrounding circuitry.