2SA1930(LBS2MATQ,M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1930 is a silicon PNP epitaxial type power transistor designed for amplifier applications. It features a collector-emitter breakdown voltage of -180 V, a maximum collector current of -2 A, and a collector power dissipation rating of 2 W at an ambient temperature of 25°C. The device exhibits a typical transition frequency of 200 MHz and is packaged in the JEITA SC-67 format.

Single Bipolar Transistors Feature Summary

• High transition frequency capability
• Complementary to 2SC5171

Single Bipolar Transistors Applications

• Power Amplifier Applications
• Driver Stage Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package variations or lead-free status. Ensure compliance with RoHS requirements by consulting the manufacturer's sales representative. Confirm that the component meets all applicable safety standards for general electronics usage before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high-speed switching characteristics within a moderate power range. Evaluate thermal management strategies carefully, as power dissipation ratings are highly dependent on case temperature conditions. Ensure the design accommodates the specified absolute maximum ratings to maintain operational reliability under varying load conditions.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of PNP transistors. It serves as the complementary counterpart to the 2SC5171 NPN transistor, facilitating push-pull configurations in audio and RF amplifier stages. The device utilizes a silicon epitaxial structure optimized for high-frequency performance and stable operation in driver applications.

Single Bipolar Transistors Replacement Considerations

The 2SC5171 is documented as the complementary pair for this component. Verify pinout compatibility and electrical specifications when substituting with other PNP transistors from different manufacturers.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SA1930?

The typical transition frequency (fT) is 200 MHz.

Is the 2SA1930 suitable for use in medical instruments?

No, the product is not intended for equipment requiring extraordinarily high quality and/or reliability, such as medical instruments.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is -180 V.