2SA1931,KEHINQ(M

Single Bipolar Transistors Overview

The Toshiba 2SA1931 is a silicon PNP epitaxial planar transistor utilizing the PCT process, designed for high-current switching applications. It features a TO-220NIS (JEITA SC-67) package with a maximum collector current of 5 A and a collector-emitter voltage rating of -50 V. The device exhibits a low saturation voltage of -0.4 V maximum at -2 A collector current and -0.2 A base current. Transition frequency reaches 60 MHz typical, with a storage time of 1.0 μs typical. Power dissipation is rated at 2 W at 25°C ambient or 20 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• Low saturation voltage capability for efficient power handling in switching circuits
• High-speed switching performance with short storage and fall times
• Complementary pairing available with the 2SC4881 NPN transistor

Single Bipolar Transistors Applications

• High-current switching applications
• General electronics equipment including computers and office machinery
• Domestic appliances and industrial robotics control circuits

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via specific sales representatives as indicated in documentation restrictions. Ensure designs adhere to absolute maximum ratings and derating guidelines found in the Toshiba Semiconductor Reliability Handbook to maintain operational safety and longevity.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust PNP switching with high current capacity up to 5 A. Consider thermal management requirements carefully, as power dissipation varies significantly between ambient and case temperatures. Verify compatibility with complementary NPN devices like the 2SC4881 if push-pull configurations are utilized in the circuit architecture.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of general-purpose PNP transistors. It utilizes an epitaxial planar structure optimized for fast switching speeds and high current density. The device is intended for broad commercial and industrial use, excluding specialized high-reliability sectors such as medical or aerospace without specific customer risk acknowledgment.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4881 as the complementary NPN transistor. No other direct substitute part numbers are documented in the provided source material.