2SA1931,NIKKIQ(J

Description：TRANS PNP 50V 5A TO-220NIS
Series：-

SKU:071028c5bb70 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1931,NIKKIQ(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 5A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1931,NIKKIQ(J

Description：TRANS PNP 50V 5A TO-220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：5:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：400mV @ 200mA, 2A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1A, 1V
Power - Max：2 W
Frequency - Transition：60MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220NIS
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1931,NIKKIQ(J

2SA1931,NIKKIQ(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1931 is a silicon PNP epitaxial planar transistor designed for high-current switching applications. It features a collector-emitter breakdown voltage of 50 V, a maximum collector current of 5 A, and a transition frequency of 60 MHz. The device operates with a low saturation voltage of -0.4 V (max) at Ic = -2 A and Ib = -0.2 A. It utilizes the PCT process and is housed in a TO-220NIS package.

Single Bipolar Transistors Feature Summary

Low saturation voltage for efficient power handling
High-speed switching capability with typical storage time of 1.0 μs
Complementary pairing with the 2SC4881 NPN transistor

Single Bipolar Transistors Applications

General-purpose high-current switching circuits
Power supply output stages
Motor driver interfaces

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation as requirements vary by production lot. Ensure proper thermal management design to maintain junction temperature within specified limits during operation.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust PNP switching performance with moderate speed. Verify that the required collector current does not exceed 5 A and that the operating voltage remains below 50 V. Consider thermal derating guidelines when designing heat dissipation solutions for continuous operation.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's general-purpose bipolar junction transistor lineup utilizing epitaxial planar technology. It serves as a standard discrete semiconductor solution for industrial and consumer electronics where reliable high-current switching is necessary without specialized RF characteristics.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4881 as its complementary counterpart. No other direct substitute part numbers are documented in the provided source material.