2SA1943-O(S1,F

Single Bipolar Transistors Overview

The Toshiba 2SA1943-O(S1,F) is a silicon PNP triple diffused power transistor housed in the TO-220AB (2-21F1A) package. It features a collector-emitter voltage of −230 V and a continuous collector current of −15 A at 25°C case temperature. The device provides a DC current gain ranging from 55 to 160 depending on the hFE classification, with a transition frequency of 30 MHz. Maximum collector power dissipation is rated at 150 W under specified thermal conditions.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon construction for high-voltage operation
• Complementary pairing with the 2SC5200 NPN transistor
• High collector-emitter breakdown voltage capability

Single Bipolar Transistors Applications

• High-fidelity audio frequency amplifier output stages
• General-purpose power amplification circuits
• Switching applications requiring high voltage ratings

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance varies by manufacturing origin. Confirm the specific hFE binning code required for your circuit design, as gain ranges differ between classifications. Ensure proper heat sinking is implemented to maintain junction temperatures within the absolute maximum rating of 150 °C during operation.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary push-pull output stages intended for high-power audio applications. Verify that the required DC current gain falls within the specific range defined by the ordering suffix. Ensure the application does not exceed the 150 W power dissipation limit without adequate thermal management.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of power transistors manufactured by Toshiba Semiconductor and Storage. It is specifically engineered as the PNP counterpart to the 2SC5200 NPN transistor, forming a matched pair for high-performance audio amplifier designs. The device utilizes a triple diffused process to achieve its high voltage and current handling capabilities.

Single Bipolar Transistors Replacement Considerations

The 2SC5200 serves as the direct complementary NPN replacement or pairing component. Other general-purpose PNP power transistors may substitute electrically but will lack the specific matching characteristics required for optimized complementary symmetry in audio output stages.