Single Bipolar Transistors 2SA1943OTU product image

2SA1943OTU

$5.08
  • Description:TRANS PNP 250V 17A TO-264-3
  • Series:-

SKU:51b4483226df Category: Brand:

  
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2SA1943OTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 250V 17A TO-264-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1943OTU

  • Description:TRANS PNP 250V 17A TO-264-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):17 A
  • Voltage - Collector Emitter Breakdown (Max):250 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 800mA, 8A
  • Current - Collector Cutoff (Max):5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 1A, 5V
  • Power - Max:150 W
  • Frequency - Transition:30MHz
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-264-3, TO-264AA
  • Supplier Device Package:TO-264-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1943OTU

2SA1943OTU

Single Bipolar Transistors Overview

The onsemi 2SA1943OTU is a PNP silicon power transistor housed in a TO-264 (TO-3P) through-hole package. It features a maximum collector current of -17 A and a collector-emitter voltage rating of -250 V. The device supports a maximum power dissipation of 150 W with a minimum DC current gain (hFE) of 55. Operating characteristics include a transition frequency of 30 MHz, an emitter-base voltage limit of -5 V, and a junction temperature range from -50°C to 150°C.

Single Bipolar Transistors Feature Summary

  • High-voltage capability with a -250 V collector-emitter breakdown rating for robust operation in demanding circuits.
  • High-current handling capacity rated at -17 A continuous collector current for substantial load driving.
  • Designed for high-power applications with a 150 W thermal dissipation limit in a flange-mountable TO-264 package.

Single Bipolar Transistors Applications

  • High-fidelity audio frequency amplifier output stages
  • General-purpose power switching applications
  • Industrial motor control circuits

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer designation, as the 2SA1943 series is produced by multiple vendors including Toshiba and onsemi. Confirm that the TO-264 package variant matches the required pinout and mechanical dimensions for the target PCB footprint. Ensure the requested hFE binning meets the circuit's minimum gain requirements before finalizing the order.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high voltage tolerance and significant current capacity is required. The TO-264 package facilitates effective heat sinking for high-power dissipation scenarios. Compare the -250 V rating against system peak voltages to ensure adequate safety margins. Consider the complementary NPN counterpart if a push-pull output configuration is necessary for the design.

Single Bipolar Transistors Part Context

The 2SA1943 is a legacy high-power PNP transistor originally specified for audio amplifier outputs. While often associated with Toshiba, onsemi manufactures a version in the TO-264 package. This part belongs to a family of complementary transistors designed for high-fidelity audio and general power amplification, offering a balance of voltage rating and current handling for discrete power stages.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify mechanical compatibility and electrical parameters against alternatives such as the 2SC5200 complementary pair contextually, though direct cross-referencing requires official datasheet validation.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2SA1943OTU?

The maximum collector-emitter voltage (VCEO) is -250 V.

Does the 2SA1943OTU support surface mount installation?

No, the 2SA1943OTU is designed for through-hole mounting in a TO-264 package.

What is the minimum DC current gain (hFE) specified for this transistor?

The minimum DC current gain (hFE) is specified as 55.

2SA1943OTU2SA1943OTU
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