Single Bipolar Transistors 2SA1954-A(TE85L,F) product image

2SA1954-A(TE85L,F)

  • Description:TRANS PNP 12V 0.5A SC-70
  • Series:-

SKU:73675e174123 Category: Brand:

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2SA1954-A(TE85L,F) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 12V 0.5A SC-70. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1954-A(TE85L,F)

  • Description:TRANS PNP 12V 0.5A SC-70
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):12 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 10mA, 2V
  • Power - Max:100 mW
  • Frequency - Transition:130MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1954-A(TE85L,F)

2SA1954-A(TE85L,F)

Single Bipolar Transistors Overview

The 2SA1954-A(TE85L,F) is a PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It utilizes silicon technology and is housed in an SC-70 (SOT-323) surface-mount package. The device features a maximum collector-emitter voltage of 12 V and a continuous collector current of 500 mA. Key electrical specifications include a DC current gain (hFE) ranging from 200 to 500 at 10 mA and 2 V, a transition frequency of 130 MHz, and a power dissipation capacity of 100 mW. The component operates within a junction temperature range up to 125°C.

Single Bipolar Transistors Feature Summary

  • PNP configuration designed for low-voltage switching applications
  • High DC current gain ensuring efficient signal amplification
  • Compact SC-70 surface-mount package for space-constrained designs

Single Bipolar Transistors Applications

  • Low-voltage switching circuits
  • Signal amplification stages
  • General-purpose electronic devices

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Toshiba documentation, as the provided reference indicates the 2SA1954B variant is obsolete. Confirm availability through authorized distributors and ensure the part number matches the exact functional requirements. Cross-reference datasheets to validate pinouts and electrical limits before integration into new designs.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a compact PNP transistor with moderate current handling capabilities. Ensure the design accommodates the 12 V voltage limit and 100 mW power dissipation. Verify that the SC-70 package footprint aligns with the PCB layout constraints and thermal management requirements of the target system.

Single Bipolar Transistors Part Context

This component belongs to the 2SA series of PNP transistors produced by Toshiba Semiconductor and Storage. It is part of a lineup of small-signal devices intended for consumer electronics and portable equipment. The TE85L packaging designation indicates a specific reel-based tape and reel format suitable for automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitutes include Rohm Semiconductor 2SB1689T106 and Diodes Incorporated ZXTP07012EFFTA.

2SA1954-A(TE85L,F)2SA1954-A(TE85L,F)

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