2SA1971(TE12L,F)

Single Bipolar Transistors Overview

The Toshiba 2SA1971 is a silicon PNP triple diffused transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of -400 V and a DC collector current rating of -0.5 A. The device operates with a maximum collector power dissipation of 500 mW at 25°C and reaches a junction temperature of up to 150°C. Electrical characteristics include a transition frequency of 35 MHz, a DC current gain ranging from 140 to 450, and a collector output capacitance of 18 pF.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon construction engineered for robust high-voltage switching performance
• Capable of handling collector-emitter voltages up to -400 V for demanding circuit protection
• Optimized switching speed with a transition frequency of 35 MHz

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power supply control stages
• General-purpose electronic switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (TE12L,F) against official Toshiba Semiconductor documentation to confirm tape-and-reel packaging and environmental compliance status. Ensure that the component meets all applicable RoHS directives and local regulatory requirements before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage PNP switching capabilities within a compact SOT-89 package. Evaluate the thermal management requirements carefully, as the 500 mW power dissipation limit necessitates adequate heat sinking or PCB copper area utilization to maintain safe operating temperatures under continuous load conditions.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of high-voltage bipolar transistors utilizing triple diffused technology. It serves as a specialized discrete semiconductor solution for power management and signal switching tasks where standard low-voltage devices are insufficient. The design prioritizes reliability in harsh electrical environments typical of industrial and consumer electronics.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference guides for verified substitutes. Do not assume functional equivalence based solely on pinout compatibility without verifying absolute maximum ratings and electrical parameters.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at -400 V.

Does the 2SA1971 support surface mount installation?

Yes, it is available in an SOT-89 surface mount package suitable for automated assembly processes.

What is the typical transition frequency?

The transition frequency (fT) is typically 35 MHz at a collector current of -50 mA.