2SA1972,F(J

Single Bipolar Transistors Overview

The Toshiba 2SA1972 is a PNP silicon triple diffused transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of -400 V and a continuous DC collector current rating of -0.5 A, with pulse capability up to -1 A. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 900 mW. Electrical characteristics include a minimum DC current gain (hFE) of 140 at -20 mA and -100 mA collector currents, a typical transition frequency of 35 MHz, and a maximum collector cut-off current of -10 μA at -400 V.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability rated at -400 V for collector-base and collector-emitter terminals.
• Triple diffused PNP silicon construction optimized for high-voltage switching performance.
• Low saturation voltage characteristics supporting efficient power handling in switching circuits.

Single Bipolar Transistors Applications

• General electronics applications including computers and office equipment
• Industrial robots and measuring equipment
• Home electronics appliances

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba sales representatives, as the datasheet indicates environmental compliance varies by lot marking. Confirm package type JEDEC TO-92MOD and pinout configuration against specific design requirements. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing component selection for long-term reliability assurance.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage PNP switching capabilities with moderate current demands. Ensure operating conditions remain within the absolute maximum ratings to prevent reliability degradation. Consider the thermal management requirements given the 900 mW power dissipation limit and the specified junction temperature range. Validate that the application does not fall under unintended use categories such as medical or aerospace systems.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's lineup of high-voltage switching transistors utilizing triple diffused technology. It serves as a discrete semiconductor solution for general electronics, industrial, and home appliance markets. The device complements other high-voltage bipolar transistors in the manufacturer's portfolio, providing reliable performance for standard switching tasks where high collector-emitter voltage tolerance is essential.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is -400 V when tested with an emitter current of -10 mA and base current of 0.

What is the typical transition frequency?

The typical transition frequency (fT) is 35 MHz, measured at a collector-emitter voltage of -5 V and a collector current of -50 mA.

What is the maximum collector power dissipation?

The maximum collector power dissipation (PC) is 900 mW at an ambient temperature of 25°C.