2SA1977-T1B-A

Overview

The CEL 2SA1977-T1B-A is a PNP silicon bipolar transistor designed for RF applications. It operates at a typical transition frequency of 8.5 GHz with a maximum collector-emitter voltage of -60 V and a maximum collector current of -50 mA. The device utilizes a SOT-23 package, designated as Package Code 33, suitable for surface-mount assembly. This component serves as an equivalent to the JEITA standard part number 2SC4095.

Feature Summary

• PNP silicon bipolar construction optimized for high-frequency signal processing
• Surface-mount SOT-23 packaging for compact circuit integration

Applications

• RF amplifier stages
• High-speed switching circuits
• General-purpose transistor applications requiring high transition frequency

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact mechanical and electrical specifications. Confirm RoHS compliance status directly with the supplier or datasheet prior to procurement.

Selection Notes

Select this component when a PNP configuration is required for frequencies up to 8.5 GHz. Ensure the design accommodates the -60 V maximum voltage rating and -50 mA current limit within the SOT-23 thermal constraints.

Part Context

This transistor belongs to the CEL Silicon Bipolar Transistors product line. It is categorized alongside other single transistors such as the NE680 series and NE856 series, providing options for various gain and frequency requirements in wireless and RF markets.

Replacement Considerations

The datasheet identifies the 2SC4095 as the JEITA equivalent part number for this component.