2SA1987-O(Q)

Single Bipolar Transistors Overview

The Toshiba 2SA1987 is a silicon PNP triple diffused power transistor designed for high-voltage audio applications. It features a minimum collector-emitter breakdown voltage of -230 V and supports a maximum continuous collector current of -15 A. The device dissipates up to 180 W at a case temperature of 25°C, with a junction temperature limit of 150°C. Electrical characteristics include a DC current gain (hFE) ranging from 35 to 160 depending on the operating point, a transition frequency of 30 MHz, and a collector output capacitance of 360 pF. It utilizes the 2-21F1A package.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability rated at -230 V minimum
• Designed as a complementary pair to the 2SC5359 NPN transistor
• Optimized for high-fidelity audio frequency amplifier output stages

Single Bipolar Transistors Applications

• 100-W high-fidelity audio frequency amplifier output stage
• Power amplifier circuits requiring high voltage handling
• Complementary driver stages in audio systems

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by contacting the manufacturer or authorized distributor, as markings indicate specific environmental compliance levels. Confirm the hFE classification code (R or O) required for your circuit design, as this affects the DC current gain range. Ensure thermal management meets the 180 W dissipation rating at Tc = 25°C. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing the design.

Single Bipolar Transistors Selection Notes

Select the 2SA1987 when a high-voltage PNP power transistor is needed for audio amplification. It serves as the direct complement to the 2SC5359. Consider the -230 V breakdown voltage and 15 A current capacity for robust performance. Verify that the application does not fall under unintended use categories such as aerospace or medical equipment. Check the specific hFE bin (R or O) to match gain requirements.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of silicon PNP transistors. These devices are engineered for general-purpose power switching and amplification. The 2SA1987 specifically targets the high-power audio market, offering high voltage ratings and significant current handling capabilities within a TO-220 style flange mount package.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC5359 as the complementary NPN transistor for paired operation. No other direct substitute part numbers are documented in the provided source material.