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2SA2013-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 50V 4A PCP. Review the specifications below when checking this part for your BOM.
The onsemi 2SA2013-TD-E is a PNP bipolar junction transistor designed for surface-mount applications. It features a maximum DC collector current of -4 A and a collector-emitter voltage rating of -50 V. The device utilizes PCP-1 packaging, specifically the SOT-89 case style (CASE 419AU). Key electrical characteristics include low saturation voltage and high DC current gain (hFE) ranging from 200 to higher values. Power dissipation is rated at 3.5 W. The component is supplied in tape and reel format with a quantity of 1000 units per reel.
Verify the specific ordering suffix TD-E to confirm the tape and reel packaging configuration and Pb-free status. Ensure compatibility with the PCP-1 (SOT-89) footprint during PCB layout. Confirm that the -50V voltage rating meets the circuit requirements. Check for any RoHS or REACH compliance documentation if required by your manufacturing standards.
Select this component when a PNP transistor with -4A current capacity and -50V breakdown is required in a compact SOT-89 package. Consider its low saturation voltage for applications demanding minimal power loss in switching modes. Verify thermal management capabilities given the 3.5W power dissipation rating in surface-mount configurations.
This part belongs to onsemi's lineup of bipolar transistors optimized for power applications. The 2SA2013 series is engineered for use in switching regulators and power supplies where size and efficiency are critical. The TD-E suffix indicates the specific packaging and environmental compliance details provided by the manufacturer.
Direct substitutes may include other PNP transistors with similar -4A/-50V ratings in SOT-89 packages, such as the 2SB1302T-TD-E, though pinout and electrical parameters must be verified against the datasheet before substitution.
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