2SA2056(TE85L,F)

Single Bipolar Transistors Overview

The Toshiba 2SA2056(TE85L,F) is a silicon PNP epitaxial planar transistor designed for high-speed switching applications. It features a DC collector current rating of -2.0 A and a maximum collector-emitter voltage (VCEO) of -50 V. The device provides a high DC current gain (hFE) ranging from 200 to 500 at IC = -0.5 A, with a low collector-emitter saturation voltage of -0.2 V max. Key electrical characteristics include a typical fall time (tf) of 90 ns and a collector output capacitance of 20 pF. It operates within a junction temperature range up to +150 °C and is housed in the JEDEC 2-3S1C surface-mount package.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a typical fall time of 90 ns
• High DC current gain ranging from 200 to 500
• Low collector-emitter saturation voltage of -0.2 V maximum

Single Bipolar Transistors Applications

• DC-DC converter circuits
• Strobe driver applications
• General-purpose high-speed switching

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TE85L against the manufacturer's latest documentation to confirm packaging details and compliance status. Ensure that design parameters remain within the absolute maximum ratings specified in the datasheet, particularly regarding thermal dissipation on FR4 boards. Confirm RoHS compatibility directly with the supplier or through official product environmental declarations before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a single PNP transistor with high current handling and fast turn-off speeds. The device is suitable for applications demanding low saturation voltage to minimize power loss during conduction. Consider the thermal resistance characteristics and safe operating area curves when determining heat dissipation requirements for continuous or pulsed operation conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of silicon PNP transistors manufactured by Toshiba Semiconductor and Storage. It utilizes an epitaxial planar process technology optimized for reliability and performance in surface-mount configurations. The component is distinct from other variants in the family based on its specific electrical thresholds and physical package dimensions defined by the JEDEC standard.

Single Bipolar Transistors Replacement Considerations

Consult the official Toshiba replacement guide or cross-reference database for verified equivalent parts. Do not substitute with generic components without verifying pinout compatibility and absolute maximum ratings match.