2SA2060(TE12L,F)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA2060(TE12L,F) is a silicon PNP epitaxial planar transistor designed for high-speed switching applications. It features a DC current gain (hFE) ranging from 200 to 500 at an IC of -0.3 A, with a maximum collector-emitter saturation voltage of -0.2 V. The device supports a continuous collector current of -2.0 A and a pulse current of -3.5 A. Key electrical ratings include a collector-base voltage of -50 V, a collector-emitter voltage of -50 V, and an emitter-base voltage of -7 V. It exhibits a typical fall time of 90 ns and operates within a junction temperature range up to 150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain ensuring efficient signal amplification
• Low collector-emitter saturation voltage for reduced power loss
• Fast switching speed suitable for high-frequency circuits

Single Bipolar Transistors Applications

• DC-DC converter circuits
• Strobe driver applications
• General-purpose high-speed switching

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging type and environmental compliance status. Ensure that the procurement channel provides valid traceability for the component lot number. Confirm that the received parts match the exact part number designation to avoid compatibility issues in high-speed switching designs.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a PNP transistor with high current handling capabilities and fast turn-off characteristics. Consider the thermal derating requirements based on the safe operating area curves provided in the datasheet. Evaluate the package thermal resistance if mounting directly onto FR4 substrates without additional copper area modifications.

Single Bipolar Transistors Part Context

This component belongs to the 2SA series of silicon PNP transistors manufactured by Toshiba Semiconductor and Storage. It utilizes an epitaxial planar process technology housed in a JEDEC SC-62 (TO-92MOD) package. The device is engineered to provide reliable performance in compact electronic systems requiring robust switching capabilities.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference lists or authorized distributor databases for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' components without verifying pinout compatibility and absolute maximum ratings.

Single Bipolar Transistors FAQ

What is the typical fall time for the 2SA2060?

The typical fall time (tf) is 90 ns under standard test conditions.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (VCE(sat)) is -0.2 V at IC = -1.0 A and IB = -0.033 A.

Is the 2SA2060 intended for use in medical equipment?

No, the product is neither intended nor warranted for use in equipment requiring extraordinarily high levels of quality and reliability, such as medical equipment.