2SA2060(TE12L,ZF)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA2060(TE12L,ZF) is a silicon PNP epitaxial planar transistor designed for high-speed switching applications. It features a DC current gain (hFE) ranging from 200 to 500 at an IC of -0.3 A, with a maximum collector-emitter saturation voltage of -0.2 V. The device supports a continuous collector current of -2.0 A and a pulse current of -3.5 A. Key electrical ratings include a collector-base voltage of -50 V, a collector-emitter voltage of -50 V, and an emitter-base voltage of -7 V. It exhibits a typical fall time of 90 ns and operates within a junction temperature range up to 150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain ensuring efficient signal amplification
• Low collector-emitter saturation voltage for reduced power loss
• Fast switching speed suitable for high-frequency circuits

Single Bipolar Transistors Applications

• DC-DC converter circuits
• Strobe driver applications
• General-purpose high-speed switching

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm package type and environmental compliance status. Ensure that the selected variant matches the required thermal dissipation capabilities for the intended PCB layout. Confirm RoHS compatibility requirements with the manufacturer prior to finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage and fast fall times are critical for circuit efficiency. Evaluate the safe operating area curves to ensure operation remains within thermal limits during pulsed conditions. Consider the SC-62 package dimensions for board space constraints and verify base drive requirements to maintain optimal hFE performance.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP transistors manufactured by Toshiba Semiconductor and Storage. These components are engineered for general-purpose use in consumer electronics and industrial control systems requiring reliable switching performance. The 2SA2060 specifically targets applications demanding high current handling capability combined with rapid response times.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference guides for verified substitutes. Ensure any replacement maintains equivalent voltage ratings, current capacity, and switching characteristics to preserve circuit functionality without modification.

Single Bipolar Transistors FAQ

What is the typical fall time for the 2SA2060?

The typical fall time (tf) is 90 ns under standard test conditions.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (VCE(sat)) is -0.2 V at IC = -1.0 A and IB = -0.033 A.

Is this transistor suitable for high-voltage applications?

No, it has a maximum collector-emitter voltage rating of -50 V, limiting its use to low-to-medium voltage circuits.