2SA2061(TE85L,F)

Single Bipolar Transistors Overview

The Toshiba 2SA2061(TE85L,F) is a silicon PNP epitaxial planar transistor designed for high-speed switching applications. It features a DC current gain (hFE) ranging from 200 to 500 at an IC of -0.5 A and a low collector-emitter saturation voltage of -0.19 V maximum at -1.6 A. The device supports a continuous collector current of -2.5 A and operates with a junction temperature up to 150 °C. Packaged in the compact 2-3S1C surface-mount format, it exhibits a typical fall time of 40 ns.

Single Bipolar Transistors Feature Summary

• High DC current gain ensuring efficient control at moderate currents
• Low collector-emitter saturation voltage for reduced power loss
• Fast switching characteristics suitable for high-frequency circuits

Single Bipolar Transistors Applications

• DC-DC converter output stages
• High-speed switching circuits
• Strobe driver applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TE85L against official Toshiba documentation to confirm reel packaging specifications. Ensure compliance with RoHS directives as indicated in the product datasheet. Review the reliability handbook for derating concepts before finalizing procurement quantities.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage and high current gain are required in a small surface-mount package. Evaluate the thermal resistance curves for your specific PCB copper area to ensure safe operation within the absolute maximum ratings under continuous load conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP transistors manufactured by Toshiba Semiconductor and Storage. It utilizes an epitaxial planar process technology optimized for fast switching performance. The device is distinct from general-purpose variants due to its specific electrical characteristics tailored for power conversion efficiency.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Do not assume functional equivalence with other manufacturers' parts without verifying pinout compatibility and absolute maximum rating limits.

Single Bipolar Transistors FAQ

What is the typical fall time for the 2SA2061?

The typical fall time (tf) is 40 ns under standard test conditions.

How does the DC current gain vary with collector current?

The minimum DC current gain is specified as 200 at IC = -0.5 A and drops to a minimum of 100 at IC = -1.6 A.

Is the 2SA2061 intended for use in automotive or medical equipment?

No, the datasheet explicitly states that the product is not intended or warranted for use in equipment requiring extraordinarily high levels of quality, such as medical devices or automobiles.