Single Bipolar Transistors 2SA20670PA product image

2SA20670PA

  • Description:TRANS PNP 60V 3A MT-4-A1
  • Series:-

SKU:af14d2474d15 Category: Brand:

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2SA20670PA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS PNP 60V 3A MT-4-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA20670PA

  • Description:TRANS PNP 60V 3A MT-4-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 375mA, 3A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 1A, 4V
  • Power - Max:2 W
  • Frequency - Transition:90MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:MT-4-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA20670PA

2SA20670PA

Single Bipolar Transistors Overview

The Panasonic 2SA20670PA is a silicon PNP epitaxial planar power transistor designed for audio and visual equipment power supplies. It features a collector current of -3A, peak current of -6A, and collector-emitter voltage of -60V. The device dissipates up to 15W with a junction temperature rating of 150°C. Electrical characteristics include a transition frequency of 90MHz, storage time of 0.7µs, and fall time of 0.15µs. It utilizes an MT-4-A1 radial through-hole package.

Single Bipolar Transistors Feature Summary

  • High-speed switching capability with short storage and fall times
  • Low collector-emitter saturation voltage for efficient operation
  • Superior forward current transfer ratio linearity
  • Radial taping format enabling automatic insertion

Single Bipolar Transistors Applications

  • Power supply circuits for TVs and VCRs
  • Industrial DC-DC converters
  • Audio and visual equipment power management

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q or P) required for your design, as the datasheet defines distinct gain ranges for each. Confirm the MT-4-A1 package dimensions match your PCB footprint. Check the manufacturer's website for the latest lifecycle status, as this component may be in maintenance or discontinued phases.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high-speed switching and low saturation voltage in PNP configurations. Ensure the thermal environment allows for 15W dissipation at TC = 25°C. Verify that the -60V collector-emitter voltage rating exceeds the maximum circuit operating voltage. Consider the radial lead form factor for automated assembly processes.

Single Bipolar Transistors Part Context

This part belongs to the 2SA2067 series of silicon PNP epitaxial planar transistors manufactured by Panasonic. These devices are engineered specifically for power supply applications in consumer electronics and industrial equipment. The series emphasizes fast switching performance and linear current gain characteristics suitable for general-purpose power control tasks.

Single Bipolar Transistors Replacement Considerations

Consult official replacement lists on the manufacturer's website for updated components. No direct substitute part numbers are confirmed in the provided documentation.

Single Bipolar Transistors FAQ

What are the hFE gain classifications for this transistor?

The device offers two gain ranks: Rank Q provides an hFE range of 120 to 250, while Rank Q provides an hFE range of 160 to 320.

What is the maximum peak collector current?

The absolute maximum rating for peak collector current (ICP) is -6A.

How does the device perform in terms of switching speed?

It features a turn-on time of 0.3µs, a storage time of 0.7µs, and a fall time of 0.15µs under specified test conditions.

2SA20670PA2SA20670PA

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