SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
2SA2071P5T100Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 60V 3A MPT3. Review the specifications below when checking this part for your BOM.
The 2SA2071P5T100Q is a PNP bipolar junction transistor manufactured by ROHM Semiconductor. It features a maximum collector current of -3 A and a collector-emitter voltage rating of -60 V. The device operates with a power dissipation of 500 mW in an SOT-89-3 surface-mount package. Key electrical parameters include a minimum DC current gain (hFE) of 120, a transition frequency (fT) of 180 MHz, and a typical saturation voltage of -200 mV at -2 A collector current. The component supports a maximum operating temperature of +150 °C.
Verify the specific suffix P5T100Q to confirm the MPT3 (SOT-89-3) package and reel packaging configuration. Ensure compliance with RoHS and REACH standards as indicated in official documentation. Confirm that the -60V/-3A ratings align with the target circuit requirements before integration.
Select this component for designs requiring high-speed PNP switching with moderate current handling. The low saturation voltage reduces power loss during conduction. Verify thermal management capabilities given the 500 mW power dissipation limit in the SOT-89 package. Compare against complementary NPN models like the 2SC5824 if paired operation is required.
This part belongs to ROHM's middle power transistor series, designed for general-purpose switching and amplification. It complements other devices in the family, such as the 2SC5824, providing a matched pair solution for push-pull or differential configurations. The SOT-89 package offers a compact footprint suitable for dense PCB layouts.
The datasheet explicitly states that the 2SA2071 complements the 2SC5824. No direct cross-manufacturer substitutes are verified in the provided source material. Check pinout compatibility if considering alternative manufacturers.
The typical fall time is 20 ns when measured at a collector current of -3 A.
Yes, the device is characterized by strong discharge power capability for both inductive and capacitive loads.
The minimum DC current gain (hFE) is specified as 120.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.