2SA2092TLQ

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SA2092TLQ is a PNP epitaxial planar silicon bipolar junction transistor designed for high-speed switching and low-frequency amplification applications. It features a TSMT3 surface-mount package with a basic ordering unit of 3000 pieces. Key electrical parameters include a collector-emitter breakdown voltage (BVCEO) of -60V, a collector-base breakdown voltage (BVCBO) of -60V, and an emitter-base breakdown voltage (BVEBO) of -6V. The device supports a continuous DC collector current of -1A and a pulse collector current of -2A, with a maximum power dissipation of 500mW at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with typical fall time of 30ns at -1A collector current
• Low saturation voltage characteristics, typically -200mV at -500mA collector current
• Strong discharge resistance against inductive and capacitive loads
• Low switching noise generation during operation

Single Bipolar Transistors Applications

• High-speed switching circuits
• Low-frequency amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TL indicates taping packaging with a quantity of 3000 units per reel. Confirm the hFE rank Q corresponds to the required gain range of 120 to 270 for your design. Ensure the TSMT3 package dimensions match your PCB footprint requirements. Check RoHS compliance status if restricted substances are a constraint. Validate the operating temperature range of -55°C to +150°C against your environmental conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring fast turn-off times and low saturation voltages for efficient power handling. The -60V rating suits applications with moderate voltage swings. Consider the TSMT3 package size for space-constrained layouts. Verify that the thermal management strategy accommodates the 500mW power dissipation limit under worst-case load conditions. Ensure base drive currents meet the specified requirements for optimal switching performance.

Single Bipolar Transistors Part Context

The 2SA2092 belongs to ROHM's lineup of general-purpose PNP bipolar transistors optimized for speed. It utilizes an epitaxial planar silicon structure to achieve reliable performance. The TSMT3 package provides a compact surface-mount solution suitable for automated assembly processes. This series targets consumer electronics and industrial control systems where switching efficiency and noise reduction are critical design factors.

Single Bipolar Transistors Replacement Considerations

The 2SA2094TL is listed as a similar level replacement with the same pinout and package. Note that the 2SA2094 has a lower collector-emitter voltage rating of -50V compared to the -60V of the 2SA2092. Verify that the reduced voltage rating does not compromise circuit safety margins before substitution.

Single Bipolar Transistors FAQ

What is the typical fall time for the 2SA2092?

The typical fall time is 30ns when measured at a collector current of -1A.

What is the DC current gain range for this transistor?

The DC current gain (hFE) ranges from 120 to 270 for the Q rank.

Is the 2SA2092 recommended for new designs?

No, it is marked as not recommended for new designs; existing customers are supported.