2SA2097(TE16L1,NQ)

Single Bipolar Transistors Overview

The Toshiba 2SA2097(TE16L1,NQ) is a silicon PNP epitaxial planar transistor designed for high-speed switching applications. It features a DC current gain (hFE) ranging from 200 to 500 at an IC of -0.5 A, and a maximum collector-emitter saturation voltage (VCE(sat)) of -0.27 V at IC = -1.6 A. The device supports a continuous collector current of -5 A and withstands collector-base and collector-emitter voltages up to -50 V. Its typical fall time (tf) is 55 ns, making it suitable for demanding power conversion circuits.

Single Bipolar Transistors Feature Summary

• High DC current gain ensuring efficient control with low base drive requirements
• Low collector-emitter saturation voltage for reduced conduction losses
• Fast switching speed with a typical fall time of 55 ns

Single Bipolar Transistors Applications

• High-speed switching applications
• DC-DC converter circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TE16L1,NQ against official Toshiba documentation to confirm package type and environmental compliance status. Confirm RoHS compatibility directly with the manufacturer or authorized distributors as standard packaging may vary. Ensure the component meets the absolute maximum ratings for your specific thermal and electrical operating conditions before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring fast turn-off times and high current handling capabilities within a -50 V rating. Consider its thermal characteristics and safe operation area curves for heat sink design. Verify that the required hFE range aligns with your base drive circuit design to ensure optimal saturation performance under varying load conditions.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of PNP transistors. It utilizes an epitaxial planar process technology optimized for high-speed performance. The device is manufactured by Toshiba Semiconductor and Storage, targeting general-purpose power switching needs in modern electronic equipment where efficiency and speed are critical parameters.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference guides for verified substitutes. Ensure any replacement matches the -50 V voltage rating, -5 A current capacity, and SC-62-3 package dimensions. Verify equivalent switching speeds and hFE ranges to maintain circuit performance integrity.