2SA2126-E

Single Bipolar Transistors Overview

The onsemi 2SA2126-E is a PNP silicon epitaxial planar transistor designed for power switching applications. It features a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of 3 A. The device utilizes MBIT process technology to achieve low collector-to-emitter saturation voltage (VCE(sat)) of 260 mV at IC = -3 A. Key electrical parameters include a collector-base voltage (VCBO) of -50 V, an emitter-base voltage (VEBO) of -6 V, and a DC current gain (hFE) minimum of 200. The total power dissipation (PD) is rated at 800 mW with a maximum junction temperature of +150 °C. The transition frequency (fT) is 390 MHz.

Single Bipolar Transistors Feature Summary

• Adopts MBIT process technology for enhanced performance
• Provides low collector-to-emitter saturation voltage for efficiency
• Offers high current capability with high-speed switching characteristics

Single Bipolar Transistors Applications

• DC/DC converter circuits
• Relay driver stages
• Lamp driver modules
• Motor driver interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E' against official datasheets, as standard listings often reference 'TL-H'. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability may vary by region. Ensure the package type matches design requirements before ordering.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a PNP switch with moderate current handling and low saturation voltage. Compare fT and hFE specifications against circuit requirements. Verify thermal management needs given the 800 mW power dissipation rating in the TO-251-3 package.

Single Bipolar Transistors Part Context

This part belongs to the 2SA2126 series of PNP bipolar transistors from onsemi. It is complementary to NPN devices in similar families, such as the 2SC5706. The series is engineered for general-purpose power switching where low VCE(sat) improves overall system efficiency.

Single Bipolar Transistors Replacement Considerations

Check for direct pin-compatible substitutes within the same voltage and current ratings. Verify that alternative parts meet the required hFE and fT specifications. Ensure the replacement package matches the PCB footprint.