2SA2127-AEX

Single Bipolar Transistors Overview

The onsemi 2SA2127-AEX is a PNP epitaxial planar silicon transistor designed for high-speed switching applications. It features a collector current rating of 3 A and a collector-emitter voltage of -50 V. The device utilizes MBIT process technology to achieve low collector-to-emitter saturation voltage and high current gain. Key electrical parameters include a transition frequency (fT) of 390 MHz, a maximum DC current gain (hFE) of 200 at 100 mA, and a collector-emitter saturation voltage of 260 mV at 2 A. The component supports a maximum power dissipation of 800 mW and operates within a junction temperature range up to +150 °C.

Single Bipolar Transistors Feature Summary

• Utilizes MBIT process technology for enhanced performance
• Provides low collector-to-emitter saturation voltage
• Designed for high-speed switching operations
• Features high current gain characteristics

Single Bipolar Transistors Applications

• DC/DC converter circuits
• Relay driver stages
• Lamp driver modules
• Motor driver interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'AEX' against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure the component meets required automotive or industrial qualification standards if applicable. Cross-reference the datasheet revision date to validate parameter accuracy before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust PNP switching with moderate current handling capabilities. The low saturation voltage minimizes power loss during conduction phases. Consider thermal management requirements given the 800 mW power dissipation limit in surface-mount packages. Evaluate the 390 MHz transition frequency against circuit speed demands.

Single Bipolar Transistors Part Context

The 2SA2127 series belongs to onsemi's lineup of bipolar junction transistors optimized for power switching. It shares architectural similarities with the 2SA2126 but may differ in packaging or specific grading. These transistors are engineered to replace older discrete solutions in compact power management designs, offering improved switching speeds and lower on-state resistance compared to standard general-purpose devices.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: 2SA2126-H.