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2SA2154MFV-GR(TPL3 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 0.15A VESM. Review the specifications below when checking this part for your BOM.
The Toshiba 2SA2154MFV-GR(TPL3 is a silicon PNP bipolar junction transistor designed for low-frequency amplification. It features a CST-3 surface-mount package and operates with a maximum collector current of 100 mA. The device supports a collector-emitter voltage of 50 V and a collector-base voltage of 50 V, with an emitter-base voltage rating of 5 V. Key electrical characteristics include a power dissipation of 100 mW and a gain-bandwidth product of 80 MHz.
Verify the exact suffix (TPL3) against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure the ordering part number matches the specific pinout and marking codes defined in the latest Toshiba Semiconductor and Storage documentation before finalizing procurement orders.
Select this component when a small-signal PNP transistor with moderate voltage ratings and low power dissipation is required for audio or low-frequency signal paths. Compare the 80 MHz gain-bandwidth product and 100 mA current limit against circuit requirements to ensure adequate headroom for the intended amplification stage without exceeding thermal limits.
This component belongs to Toshiba's lineup of discrete bipolar junction transistors optimized for consumer and industrial electronics. It serves as a complementary or standalone active element in analog signal chains, distinct from high-power switching devices or digital bias resistor transistors offered by the same manufacturer.
Consult official Toshiba cross-reference guides for verified substitutes. Do not assume functional equivalence with other PNP transistors based solely on package compatibility; verify voltage, current, and gain parameters against the original design specifications.
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