Single Bipolar Transistors 2SA2154MFV-GR(TPL3 product image

2SA2154MFV-GR(TPL3

  • Description:TRANS PNP 50V 0.15A VESM
  • Series:-

SKU:739e693b1410 Category: Brand:

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2SA2154MFV-GR(TPL3 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 0.15A VESM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA2154MFV-GR(TPL3

  • Description:TRANS PNP 50V 0.15A VESM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VESM
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA2154MFV-GR(TPL3

2SA2154MFV-GR(TPL3

Single Bipolar Transistors Overview

The Toshiba 2SA2154MFV-GR(TPL3 is a silicon PNP bipolar junction transistor designed for low-frequency amplification. It features a CST-3 surface-mount package and operates with a maximum collector current of 100 mA. The device supports a collector-emitter voltage of 50 V and a collector-base voltage of 50 V, with an emitter-base voltage rating of 5 V. Key electrical characteristics include a power dissipation of 100 mW and a gain-bandwidth product of 80 MHz.

Single Bipolar Transistors Feature Summary

  • Designed specifically for low-frequency amplification applications
  • Utilizes silicon technology for stable performance
  • Configured as a single PNP transistor in a compact surface-mount package

Single Bipolar Transistors Applications

  • Low frequency amplifier circuits
  • General purpose signal processing
  • Audio frequency pre-amplification stages

Single Bipolar Transistors Procurement Notes

Verify the exact suffix (TPL3) against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure the ordering part number matches the specific pinout and marking codes defined in the latest Toshiba Semiconductor and Storage documentation before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a small-signal PNP transistor with moderate voltage ratings and low power dissipation is required for audio or low-frequency signal paths. Compare the 80 MHz gain-bandwidth product and 100 mA current limit against circuit requirements to ensure adequate headroom for the intended amplification stage without exceeding thermal limits.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's lineup of discrete bipolar junction transistors optimized for consumer and industrial electronics. It serves as a complementary or standalone active element in analog signal chains, distinct from high-power switching devices or digital bias resistor transistors offered by the same manufacturer.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference guides for verified substitutes. Do not assume functional equivalence with other PNP transistors based solely on package compatibility; verify voltage, current, and gain parameters against the original design specifications.

2SA2154MFV-GR(TPL32SA2154MFV-GR(TPL3

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