2SA2154MFV-Y,L3F

Single Bipolar Transistors Overview

The 2SA2154MFV-Y,L3F is a PNP silicon epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. Designed for low-frequency amplification, it features a CST-3 surface-mount package. Key electrical ratings include a maximum collector current of 100 mA, a collector-emitter voltage (Vceo) of 50 V, and a collector-base voltage (Vcbo) of 50 V. The device has an emitter-base voltage (Vebo) rating of 5 V, a power dissipation of 100 mW, and a gain-bandwidth product (ft) of 80 MHz.

Single Bipolar Transistors Feature Summary

• Utilizes silicon epitaxial planar technology for reliable operation in low-frequency amplification circuits.
• Integrated into a compact CST-3 surface-mount package to facilitate automated assembly and space-constrained designs.

Single Bipolar Transistors Applications

• Low-frequency signal amplification stages
• General-purpose switching applications within specified voltage limits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'Y' against official Toshiba documentation to confirm any distinct manufacturing or testing variations compared to standard variants. Ensure the CST-3 package footprint matches the target PCB design. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 50 V collector-emitter voltage and 100 mA continuous current capability is required. The 80 MHz transition frequency suits low-frequency amplification tasks. Evaluate thermal management requirements given the 100 mW power dissipation limit in the small CST-3 package during circuit design.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's discrete bipolar junction transistor portfolio, specifically engineered for general-purpose amplification and switching. It complements other small-signal transistors in the manufacturer's lineup, offering a standardized solution for consumer electronics and industrial control boards requiring reliable PNP switching characteristics.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements must match the PNP polarity, 50 V Vceo rating, 100 mA Ic limit, and CST-3 package dimensions to ensure mechanical and electrical compatibility without redesigning the host circuit board.