2SA2161J0L

Single Bipolar Transistors Overview

The Panasonic 2SA2161J0L is a small signal PNP silicon epitaxial planar transistor designed for general amplification. It operates with a collector-emitter voltage of -12 V and a maximum collector current of -500 mA. The device features a minimum forward current transfer ratio (hFE) of 270 at -10 mA, ensuring reliable gain. It includes low collector-emitter saturation voltage characteristics and utilizes an SS-Mini3-F1 package compatible with automatic insertion via tape packing.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage
• SS-Mini type package for equipment downsizing
• Compatible with automatic insertion through tape packing

Single Bipolar Transistors Applications

• General amplification in office equipment
• Amplification in communications equipment
• Amplification in measuring instruments
• Amplification in household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Panasonic documentation to confirm packaging details such as reel quantity or tape specifications. Confirm the component lifecycle status, as this part may be classified under maintenance or discontinued categories. Ensure compliance with RoHS directives and verify that the intended application falls within standard electronic equipment parameters rather than specialized safety-critical systems.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a compact PNP transistor with high current gain. The SS-Mini3-F1 package facilitates automated surface-mount assembly. Verify that the operating conditions remain within the absolute maximum ratings, specifically the -12 V collector-emitter voltage and -500 mA collector current limits. Consider the complementary 2SC6037J NPN transistor if matched pairs are required for circuit design.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SA series of small signal bipolar transistors. It is manufactured using silicon epitaxial planar technology. The device is designed to complement the 2SC6037J NPN transistor, allowing for balanced performance in push-pull or differential amplifier configurations within consumer electronics and industrial control circuits.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-reference electrical parameters such as VCEO, IC, and hFE when evaluating alternative components from other manufacturers.