2SA2169-TL-E

Single Bipolar Transistors Overview

The onsemi 2SA2169-TL-E is a PNP bipolar junction transistor (BJT) designed for high-current switching applications. It features a maximum collector current of 10 A and a collector-emitter voltage rating of 50 V. The device utilizes a silicon construction housed in a TO-251-3 surface-mount package, supporting through-hole mounting styles. Key electrical characteristics include a power dissipation capacity of 20 W, a transition frequency of 130 MHz, and a minimum DC current gain of 200. The component operates at a maximum junction temperature of +150°C with a collector-emitter saturation voltage of 290 mV.

Single Bipolar Transistors Feature Summary

• High current handling capability suitable for demanding power switching loads
• Low saturation voltage to minimize conduction losses during active states
• Robust thermal performance allowing operation up to 150°C junction temperature

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Motor control driver stages
• Power supply output regulation

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact binning and packaging specifications. Confirm RoHS compliance status directly from the datasheet as regulatory requirements may vary by production lot. Ensure the procurement channel provides valid traceability records for this discontinued or limited-stock component type.

Single Bipolar Transistors Selection Notes

Select this component when a single PNP transistor capable of handling 10 A continuous current is required in a compact surface-mount form factor. Consider the 50 V voltage rating relative to the system's maximum operating voltage. Evaluate the thermal management requirements based on the 20 W power dissipation limit and the specific ambient conditions of the target application.

Single Bipolar Transistors Part Context

This part belongs to the 2SA2169 series of high-power PNP transistors manufactured by onsemi. It is categorized under Bipolar Transistors - BJT within the broader discrete semiconductor product line. The device represents a silicon-based solution for medium-to-high power applications requiring reliable switching performance in a standardized TO-251-3 package.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.