2SA2184-HF

Single Bipolar Transistors Overview

The Comchip Technology 2SA2184-HF is a PNP silicon power transistor housed in a TO-252 surface-mount package. It features a maximum collector-emitter breakdown voltage of 450 V and a continuous collector current rating of 1 A, with a total power dissipation capability of 1 W. The device utilizes a planar epitaxial structure designed for high-speed switching applications. Key electrical characteristics include a low collector saturation voltage to minimize conduction losses and a high DC current gain (hFE) ranging from 80 to 300 at specified test conditions. The component is halogen-free and complies with RoHS standards, ensuring environmental safety while maintaining robust performance in high-voltage switching circuits.

Single Bipolar Transistors Feature Summary

• High voltage blocking capability suitable for demanding power switching environments
• Low collector saturation voltage for improved efficiency
• Ultra-high-speed switching characteristics for rapid response times
• Surface-mount TO-252 package for optimized board space utilization

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power management systems requiring fast transient response
• Industrial control modules utilizing PNP logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning requirements against your circuit design, as gain varies significantly between minimum and maximum limits. Confirm that the thermal resistance of your PCB layout can dissipate the rated 1 W power effectively. Ensure the TO-252 footprint matches your assembly specifications precisely. Cross-reference the marking code '2SA2184' on incoming inventory to prevent substitution errors. Validate compliance documentation for RoHS and halogen-free status if required by your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 450 V breakdown voltage is necessary for high-side or high-voltage switching tasks. The TO-252 package is appropriate for applications where moderate current handling and efficient heat dissipation are required without through-hole constraints. Consider the low saturation voltage benefit for reducing power loss in saturated switch modes. Evaluate the switching speed requirements to ensure compatibility with the operating frequency of the target circuit.

Single Bipolar Transistors Part Context

This part belongs to the Comchip Technology 2SA series of single bipolar transistors. These devices are engineered for general-purpose and specialized power switching applications. The series emphasizes reliability and performance in compact surface-mount formats. The 2SA2184-HF specifically addresses the need for high-voltage PNP solutions in modern electronics manufacturing.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings before considering alternative manufacturers. Ensure any replacement maintains the TO-252 form factor and meets the 450 V / 1 A specifications.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (Vceo) is 450 V.

Is the device lead-free?

Yes, the 2SA2184-HF is halogen-free and compliant with RoHS standards.