2SA2195,LF

Single Bipolar Transistors Overview

The Toshiba 2SA2195 is a PNP silicon epitaxial transistor designed for high-speed switching applications. It features a DC current gain (hFE) ranging from 200 to 500 at an IC of -0.5 A, and a low collector-emitter saturation voltage of -0.2 V maximum at -1.0 A. The device exhibits a typical fall time of 90 ns. Absolute maximum ratings include a collector-base voltage of -50 V, a collector-emitter voltage of -50 V, and a continuous collector current of -1.7 A. Power dissipation is rated at 800 mW on a ceramic board and 500 mW on an FR4 board.

Single Bipolar Transistors Feature Summary

• High DC current gain capability with values between 200 and 500 under standard test conditions.
• Low collector-emitter saturation voltage to minimize power loss during conduction.
• Fast switching performance characterized by a short fall time for rapid signal transitions.

Single Bipolar Transistors Applications

• DC-DC converter circuits
• Strobe driver applications
• General-purpose high-speed switching

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm package type and environmental compliance status. Ensure that the component selection aligns with the manufacturer's reliability handbook guidelines regarding derating concepts and operating temperature limits. Confirm RoHS compatibility directly through authorized distributors or the manufacturer before procurement.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require a PNP transistor with high current gain and fast turn-off characteristics. Evaluate the thermal management requirements based on the specified power dissipation limits for both ceramic and FR4 mounting substrates. Ensure that base drive currents are sufficient to maintain the transistor within the low saturation voltage region during operation.

Single Bipolar Transistors Part Context

This component belongs to the family of general-purpose small-signal transistors manufactured using a silicon epitaxial process. It is housed in a compact surface-mount package suitable for automated assembly processes. The device is engineered to provide reliable performance in consumer electronics and industrial control systems requiring efficient switching capabilities.

Single Bipolar Transistors Replacement Considerations

Consult the official Toshiba replacement guide for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' devices without verifying pinout configurations, absolute maximum ratings, and electrical parameters such as hFE and switching times.

Single Bipolar Transistors FAQ

What is the typical fall time for the 2SA2195?

The typical fall time is 90 ns, measured under specific test conditions with a collector current of -1.0 A and base drive currents of ±33 mA.

How does the power dissipation rating vary with the mounting substrate?

Power dissipation is rated at 800 mW when mounted on a ceramic board and decreases to 500 mW when mounted on an FR4 board.

What is the minimum DC current gain specified for this transistor?

The minimum DC current gain (hFE) is specified as 200 when the collector current is -0.3 A and the collector-emitter voltage is -2 V.