2SA2205-TL-E

Single Bipolar Transistors Overview

The onsemi 2SA2205-TL-E is a PNP bipolar junction transistor in the TP-FA surface-mount package. It features a maximum collector-emitter voltage of -100V and a continuous collector current of -2A. The device has a maximum power dissipation of 800mW and a transition frequency of 300MHz. Key electrical characteristics include a low collector-to-emitter saturation voltage, high-speed switching capability, and large current capacitance. The component operates at a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient power handling
• High-speed switching performance suitable for rapid signal processing
• Large current capacitance supporting robust load driving

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Power management applications requiring low saturation voltage
• Amplifier stages utilizing PNP configuration

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required packaging and tape specifications. Confirm that the intended application environment remains within the specified thermal and voltage limits. Check for any end-of-life notices or obsolescence schedules associated with this part number before finalizing procurement plans. Ensure that the supplier provides valid traceability documentation for quality assurance purposes.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with low VCE(sat) and high-speed switching is required. The TP-FA package offers a compact solution for surface-mount designs. Consider the 100V rating and 2A current capacity against circuit demands. Evaluate thermal management requirements given the 800mW power dissipation limit. Compare against alternatives if higher voltage ratings or different package styles are necessary.

Single Bipolar Transistors Part Context

The 2SA2205 series represents a line of PNP transistors designed for general-purpose use. These devices utilize FBET and MBIT processes to achieve enhanced performance metrics. The family is characterized by its ability to handle significant currents while maintaining low saturation voltages. This specific model continues the tradition of reliable switching and amplification in compact form factors.

Single Bipolar Transistors Replacement Considerations

The 2SA1593T-TL-E is a documented comparable alternative within the same manufacturer portfolio. Verify pinout compatibility and electrical parameter overlaps before substitution. Ensure that the replacement part meets all original design constraints regarding voltage, current, and thermal performance.