ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
2SA673AD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS PNP 50V 0.5A TO-92. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SA673AD-E
- Description：TRANS PNP 50V 0.5A TO-92
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 15mA, 150mA
- Current - Collector Cutoff (Max)：500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：320 @ 10mA, 3V
- Power - Max：400 mW
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SA673AD-E
Single Bipolar Transistors Overview
The 2SA673AD-E is a PNP silicon small-signal transistor manufactured by Renesas Electronics Corporation. It is housed in a TO-92 through-hole package with three pins. The device supports a maximum collector current of 0.5 A and a collector-emitter voltage rating of 35 V. It features a minimum DC current gain (hFE) of 160, ensuring reliable amplification performance for general-purpose electronic applications.
Single Bipolar Transistors Feature Summary
- PNP polarity configuration suitable for signal amplification circuits
- Silicon-based construction within a standard TO-92 cylindrical plastic package
- High DC current gain characteristics for efficient signal processing
Single Bipolar Transistors Applications
- General-purpose amplifier circuits
- Small-signal switching applications
- Audio pre-amplification stages
Single Bipolar Transistors Procurement Notes
Verify the specific suffix 'AD' against official Renesas documentation to confirm the exact hFE binning and electrical tolerances. Ensure the component matches the required TO-92 pinout and material specifications. Cross-reference datasheet parameters with design requirements before integration.
Single Bipolar Transistors Selection Notes
Select this component when a PNP transistor with 35V breakdown and 0.5A continuous current capability is required. The high minimum hFE makes it suitable for low-current amplification tasks. Confirm that the through-hole TO-92 form factor aligns with the target PCB layout constraints.
Single Bipolar Transistors Part Context
This part belongs to the Renesas discrete semiconductor transistor portfolio. It is designed as a general-purpose small-signal device. The manufacturer provides technical documentation detailing absolute maximum ratings and electrical characteristics for circuit design purposes.
Single Bipolar Transistors Replacement Considerations
Consult official Renesas substitution guides or equivalent manufacturer cross-reference lists for verified alternatives. Do not assume functional compatibility based solely on package similarity.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
