2SA733P_D26Z

Single Bipolar Transistors Overview

The onsemi 2SA733P_D26Z is a PNP silicon small-signal transistor housed in a TO-92 package. It features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 150mA at 25°C. The device exhibits a DC current gain (hFE) of at least 120 when tested at 1mA and 6V, with a transition frequency of 180MHz. Maximum power dissipation is limited to 250mW, and the junction temperature can reach up to 150°C.

Single Bipolar Transistors Feature Summary

• PNP silicon construction for general-purpose switching and amplification
• High transition frequency suitable for RF applications
• Robust DC current gain characteristics

Single Bipolar Transistors Applications

• General-purpose signal amplification
• Switching circuits
• RF amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix D26Z against official datasheets to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure the component matches the required PNP configuration and TO-92 form factor for your design.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a compact PNP transistor with moderate current handling and high-frequency response. Compare its hFE and transition frequency against alternatives if precise gain or bandwidth is critical. Verify that the 250mW power dissipation limit accommodates the thermal conditions of the target application.

Single Bipolar Transistors Part Context

This part belongs to the 2SA733 series of PNP transistors manufactured by onsemi. These devices are commonly used in consumer electronics and industrial control systems where small-signal processing is required. The TO-92 package provides a cost-effective solution for through-hole mounting.

Single Bipolar Transistors Replacement Considerations

The KSA733YBU is a documented equivalent from onsemi. Verify pinout compatibility and electrical parameter overlaps before substitution.