2SA949-Y,F(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA949-Y,F(J) is a silicon PNP triple diffused transistor designed for driver-stage audio amplifier and high-voltage switching applications. It features a collector-emitter voltage of -150 V, a collector current of -50 mA, and a power dissipation of 800 mW. The device exhibits a typical transition frequency of 120 MHz and a low output capacitance of 4.0 pF. The 'Y' suffix indicates a DC current gain (hFE) classification of 120 to 240 at VCE = -5 V and IC = -10 mA.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability with a collector-emitter voltage rating of -150 V
• Low output capacitance of 4.0 pF typical value for efficient signal handling
• High transition frequency of 120 MHz typical value supporting fast switching operations

Single Bipolar Transistors Applications

• Driver-stage audio amplifiers
• High-voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix requirements against the manufacturer's datasheet to ensure correct hFE binning and environmental compliance status. Confirm package details match the JEDEC TO-92MOD specification. Review the latest Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation up to 150 V combined with moderate current handling capabilities. The specified hFE range of 120 to 240 ensures consistent gain performance for driver stages. Ensure thermal management accommodates the 800 mW power dissipation limit within the operating temperature range.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba Silicon PNP Triple Diffused Type transistor family. These devices are engineered for general electronics applications including computers, office equipment, and home appliances. They are not intended for use in nuclear, aerospace, medical, or automotive transportation systems without specific permission.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Cross-referencing requires matching polarity, voltage ratings, current limits, and package dimensions to maintain circuit integrity.

Single Bipolar Transistors FAQ

What does the 'Y' suffix indicate for the 2SA949?

The 'Y' suffix designates the DC current gain (hFE) classification, specifying a minimum gain of 120 and a maximum of 240 under standard test conditions.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is -150 V at an ambient temperature of 25°C.

Is this component suitable for automotive safety-critical applications?

No. The product documentation explicitly states it is not intended for use in automobiles, trains, ships, or other transportation systems requiring extraordinary reliability.