2SA949-Y,ONK-1F(J

Description：TRANS PNP 150V 0.05A TO-92MOD
Series：-

SKU:0bc28a4ccbd4 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA949-Y,ONK-1F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 150V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA949-Y,ONK-1F(J

Description：TRANS PNP 150V 0.05A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：800mV @ 1mA, 10A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
Power - Max：800 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA949-Y,ONK-1F(J

2SA949-Y,ONK-1F(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA949 is a silicon PNP triple diffused type transistor designed for driver-stage audio amplifier and high-voltage switching applications. It features a collector-emitter voltage of -150 V, a collector current of -50 mA, and a power dissipation of 800 mW. The device exhibits a typical transition frequency of 120 MHz and a low output capacitance of 4.0 pF. The component is housed in a JEDEC TO-92MOD package with three terminals.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability suitable for demanding switching environments
Low output capacitance to support high-frequency signal integrity
High transition frequency optimized for fast response times

Single Bipolar Transistors Applications

Driver-stage audio amplifiers
High-voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (e.g., Y, ONK-1F(J)) against official Toshiba documentation to confirm DC current gain classification and environmental compliance status. Ensure the selected variant matches the required hFE range and RoHS compatibility before procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high collector-emitter voltage ratings combined with low output capacitance. Consider the TO-92MOD package constraints and the 800 mW power dissipation limit relative to ambient temperature derating curves.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba Silicon PNP Triple Diffused Type transistor family. It is engineered specifically for general electronics applications, including computers, office equipment, and home appliances, while excluding unintended uses such as aerospace or medical systems.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba resources for verified substitute part numbers. Do not assume cross-compatibility based on generic specifications without verifying pinout and electrical limits.