2SA949-Y(T6ONK1,FM

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA949-Y(T6ONK1,FM) is a silicon PNP triple diffused transistor designed for driver-stage audio amplifier applications and high-voltage switching. It features a collector-emitter voltage of −150 V and a maximum collector current of −50 mA. The device exhibits a transition frequency of 120 MHz and an output capacitance of 4.0 pF. The Y suffix indicates a DC current gain (hFE) range of 120 to 240 at −10 mA. It utilizes a JEDEC TO-92MOD package with a power dissipation rating of 800 mW.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon PNP construction
• High breakdown voltage capability
• Low output capacitance design
• High transition frequency performance

Single Bipolar Transistors Applications

• Driver-stage audio amplifiers
• High-voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required hFE classification and environmental compliance status. Confirm the package type aligns with the intended PCB footprint. Review the manufacturer's reliability handbook for derating guidelines under heavy loads. Ensure the component meets RoHS requirements if applicable to the final assembly. Validate all operating parameters against the absolute maximum ratings provided in the datasheet.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage handling and low output capacitance. The Y grade provides higher current gain suitable for precise driver stages. Consider the TO-92MOD package for through-hole mounting constraints. Evaluate thermal management needs based on the 800 mW power dissipation limit. Compare transition frequency specifications against signal bandwidth requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP transistors manufactured by Toshiba Semiconductor and Storage. The series includes various models optimized for different voltage and current levels. The 2SA949 specifically targets high-voltage switching and audio driver roles. It complements other components in amplifier designs requiring matched characteristics.

Single Bipolar Transistors Replacement Considerations

Check for direct substitutes within the same manufacturer's portfolio that share identical pinouts and electrical ratings. Verify compatibility with existing circuit designs before substitution.

Single Bipolar Transistors FAQ

What does the 'Y' suffix indicate for this transistor?

The 'Y' suffix specifies the DC current gain (hFE) classification, which ranges from 120 to 240 when tested at a collector current of −10 mA.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at −150 V.

What is the typical transition frequency of the 2SA949?

The typical transition frequency (fT) is 120 MHz, measured at a collector-emitter voltage of −30 V and a collector current of −10 mA.