2SA949-Y(TE6,F,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA949-Y(TE6,F,M) is a silicon PNP triple diffused transistor designed for driver-stage audio amplifier and high-voltage switching applications. It features a collector-emitter breakdown voltage of -150 V, a maximum collector current of -50 mA, and a power dissipation rating of 800 mW at 25°C. The device exhibits a typical transition frequency of 120 MHz and a typical output capacitance of 4.0 pF. The 'Y' suffix indicates an hFE classification range of 120 to 240. It is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon PNP construction optimized for high-voltage switching
• High breakdown voltage capability with low output capacitance
• High transition frequency suitable for driver-stage audio amplifiers

Single Bipolar Transistors Applications

• Driver-stage audio amplifiers
• High-voltage switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (TE6,F,M) against official Toshiba documentation to confirm packaging format and environmental compliance status. Confirm that the Y suffix aligns with the required DC current gain range of 120 to 240 for your design specifications. Ensure the component meets all applicable export control regulations before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 150V collector-emitter voltage and 50mA continuous current capacity is required. The high transition frequency makes it appropriate for audio driver stages. Verify that the TO-92MOD package fits the thermal and spatial constraints of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of silicon PNP transistors. These devices are engineered for general electronics applications, including computers, office equipment, and home appliances. They are not intended for use in nuclear facilities, aerospace, medical equipment, or automotive transportation systems without specific permission.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference documents for verified substitutes. Do not assume functional equivalence based on generic parameters alone.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SA949-Y variant?

The 'Y' suffix indicates a minimum DC current gain (hFE) of 120 and a maximum of 240 when measured at VCE = -5 V and IC = -10 mA.

Is this component suitable for automotive or medical applications?

No. The datasheet explicitly states that the product is neither intended nor warranted for use in medical equipment or automobiles unless specifically permitted by Toshiba.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is -150 V at an ambient temperature of 25°C.