2SA965-O(TE6,F,M)

Description：TRANS PNP 120V 0.8A TO-92MOD
Series：-

SKU:8a9cfb5f0ac1 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA965-O(TE6,F,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 120V 0.8A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA965-O(TE6,F,M)

Description：TRANS PNP 120V 0.8A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 100mA, 5V
Power - Max：900 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA965-O(TE6,F,M)

2SA965-O(TE6,F,M)

Single Bipolar Transistors Overview

The Toshiba 2SA965-O(TE6,F,M) is a silicon PNP epitaxial transistor manufactured using the PCT process. It features a collector-base voltage of -120 V, a collector-emitter voltage of -120 V, and an emitter-base voltage of -5 V. The device supports a maximum continuous collector current of -800 mA and a power dissipation of 900 mW at 25°C ambient temperature. Electrical characteristics include a DC current gain (hFE) range of 80 to 160 for the 'O' classification, a transition frequency of 120 MHz, and a collector output capacitance of 40 pF. It is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

Utilizes Toshiba's PCT process for high reliability
Designed as a complementary pair to the 2SC2235 NPN transistor
Suitable for driver-stage amplifier applications

Single Bipolar Transistors Applications

Power amplifier circuits
Driver-stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and environmental compliance status. Confirm RoHS compatibility directly with the manufacturer or authorized distributor, as availability varies by lot. Ensure the component meets the absolute maximum ratings for your specific operating conditions before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring a PNP transistor with a 120 V breakdown voltage. The 'O' suffix indicates a specific DC current gain binning range of 80 to 160. Consider the thermal derating requirements for power dissipation above 25°C ambient temperature. Verify that the application does not involve unintended uses such as automotive or medical systems.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of small-signal bipolar junction transistors. It is specifically designed as the PNP counterpart to the 2SC2235 NPN transistor, facilitating push-pull configurations. The device is intended for use in general-purpose electronic equipment rather than specialized high-reliability sectors.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC2235 as its complementary match. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 'O' classification?

For the 'O' classification, the DC current gain (hFE) ranges from 80 to 160 when measured at VCE = -5 V and IC = -100 mA.

Is this transistor suitable for aerospace or medical applications?

No. The product is neither intended nor warranted for use in equipment requiring extraordinarily high levels of quality and reliability, including aerospace and medical equipment.