2SA965-Y,F(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA965-Y,F(J) is a silicon PNP epitaxial planar transistor manufactured using the PCT process. It features a JEDEC TO-92MOD package with three pins. The device provides a collector-base voltage of -120 V, a collector-emitter voltage of -120 V, and an emitter-base voltage of -5 V. Maximum continuous collector current is rated at -800 mA, while maximum collector power dissipation reaches 900 mW at 25°C ambient temperature. The junction temperature limit is 150°C. The 'Y' suffix indicates a DC current gain (hFE) classification of 120 to 240 when tested at VCE = -5 V and IC = -100 mA.

Single Bipolar Transistors Feature Summary

• Utilizes Toshiba's PCT (Planar Chip Transistor) epitaxial process for stable performance.
• Designed as a complementary pair to the 2SC2235 NPN transistor.
• Engineered for use in driver-stage amplifier applications.

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver-stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Ensure the selected hFE bin matches the circuit requirements, noting that the Y suffix specifies a gain range of 120 to 240. Confirm package type is TO-92MOD and validate absolute maximum ratings against the intended operating conditions to maintain reliability standards.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring a PNP transistor with high voltage tolerance up to 120 V. The device is suitable for driver stages where it complements the 2SC2235. Consider the thermal derating curves for power dissipation above 25°C ambient temperature. Verify that the required DC current gain falls within the 120 to 240 range specified for the Y classification.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of silicon PNP transistors. It is specifically designed for audio and general-purpose amplifier applications. The device is housed in a plastic encapsulated TO-92MOD package, which is standard for through-hole mounting. It serves as a counterpart to the 2SC2235 NPN transistor in push-pull configurations.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly states the 2SA965 is complementary to the 2SC2235. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SA965-Y?

The Y suffix indicates a DC current gain (hFE) classification ranging from 120 to 240 under test conditions of VCE = -5 V and IC = -100 mA.

Is the 2SA965 compatible with the 2SC2235?

Yes, the datasheet identifies the 2SA965 as complementary to the 2SC2235 NPN transistor.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 900 mW at an ambient temperature of 25°C.