Single Bipolar Transistors 2SA965-Y(F,M) product image

2SA965-Y(F,M)

  • Description:TRANS PNP 120V 0.8A TO-92MOD
  • Series:-

SKU:362c94dc4bf1 Category: Brand:

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2SA965-Y(F,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 120V 0.8A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA965-Y(F,M)

  • Description:TRANS PNP 120V 0.8A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA965-Y(F,M)

2SA965-Y(F,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA965 is a silicon PNP epitaxial transistor utilizing the PCT process. It features a collector-emitter voltage of -120 V, a maximum collector current of -800 mA, and a power dissipation rating of 900 mW at 25°C ambient temperature. The device exhibits a transition frequency of 120 MHz and a DC current gain ranging from 80 to 240 depending on the specific binning classification. It is housed in a JEDEC TO-92MOD plastic package with a junction temperature limit of 150°C.

Single Bipolar Transistors Feature Summary

  • Complementary pairing with the 2SC2235 NPN transistor for push-pull configurations
  • High-speed switching capability supported by a 120 MHz transition frequency
  • Robust thermal performance allowing operation up to a 150°C junction temperature

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Driver-stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate potential variations between standard and environmentally compliant versions. Confirm the specific hFE binning (O or Y) required for your circuit design against the datasheet classifications. Ensure the TO-92MOD package dimensions align with your PCB footprint requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing general electronics applications requiring a high-voltage PNP transistor with moderate current handling capabilities. The complementary relationship with the 2SC2235 makes it suitable for balanced amplifier stages. Verify that the operating conditions remain within the absolute maximum ratings to maintain reliability, particularly regarding power dissipation derating at elevated temperatures.

Single Bipolar Transistors Part Context

This component belongs to the family of bipolar junction transistors manufactured using Toshiba's PCT (Planar Chip Transistor) process technology. Designed primarily for general-purpose electronics such as computers, office equipment, and home appliances, it provides reliable performance for driver and amplification tasks within standard industrial and consumer specifications.

Single Bipolar Transistors Replacement Considerations

The 2SC2235 is documented as the complementary NPN counterpart. No other direct substitute part numbers are confirmed in the provided documentation.

2SA965-Y(F,M)2SA965-Y(F,M)

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