2SAR340PT100P

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SAR340PT100P is a PNP silicon bipolar junction transistor (BJT) designed for middle power applications. It features a collector-emitter voltage (VCEO) of -400 V and a continuous collector current (IC) of -100 mA. The device operates with a maximum power dissipation of 0.5 W in standard conditions, extending to 2.0 W when mounted on a ceramic board. Key electrical parameters include a DC current gain (hFE) ranging from 82 to 270 at IC = -10 mA, and a collector-emitter saturation voltage (VCE(sat)) of -400 mV maximum at IC/IB = -20mA/-2mA. It utilizes the MPT3 (SC-62) surface-mount package.

Single Bipolar Transistors Feature Summary

• High voltage capability with a -400 V collector-emitter breakdown rating suitable for demanding switching environments.
• Low saturation voltage characteristic to minimize power loss during conduction states.
• Complementary NPN counterpart available within the same product family for push-pull configurations.

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as tape width and reel size. Ensure the component meets required RoHS compliance standards for the target assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage isolation in a compact surface-mount footprint. Consider the thermal constraints carefully, as power dissipation ratings vary significantly between reference land mounting and ceramic board mounting. Verify that the required hFE bin matches the circuit's drive requirements, as gain classification affects base current calculations.

Single Bipolar Transistors Part Context

This device belongs to the 2SAR series of PNP transistors manufactured by ROHM Semiconductor. It is engineered for middle power applications where high voltage tolerance is critical. The MPT3 package provides a balance between thermal performance and space efficiency for surface-mount technology assemblies.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SCR346P as the complementary NPN type. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for the 2SAR340PT100P?

The maximum collector-base voltage (VCBO) is rated at -400 V.

How does power dissipation change based on mounting conditions?

Power dissipation is 0.5 W when each terminal is mounted on a reference land, and increases to 2.0 W when mounted on a ceramic board measuring 40x40x0.7 mm.

What is the typical output capacitance value?

The typical output capacitance (Cob) is 15 pF, measured under conditions of VCB = -10 V, IE = 0 A, and f = 1 MHz.